Method for manufacturing a display device

ABSTRACT

A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between. a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode. The first thin film transistor is located below the second thin film transistor.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese applicationJP2016-058455 filed on Mar. 23, 2016, the content of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a display device and a method formanufacturing the same.

2. Description of the Related Art

A display device displays an image by emitting light with luminance andchromaticity responding to each pixel. For example, the light is emittedby flowing a current through an organic light-emitting layer providedbetween a plurality of pixel electrodes which are arranged in a matrixshape and a common electrode which is common to the pixel electrodes Ineach of the pixels, a pixel circuit where a plurality of thin filmtransistors are combined with a capacitor is laid out.

The thin film transistor configured of low-temperature polysilicon isfrequently used since drive performance thereof is high. The silicon ispolycrystallized by excimer laser annealing, but shot variation of thelaser becomes large, and it is not possible to reduce current variationof each pixel. Therefore, there is a need to provide a correctioncircuit or to repeat irradiation by irradiating the silicon with thelaser several times, and there are problems such as high cost of adevice and a material of the laser.

In recent years, as a thin film transistor process, a process formanufacturing the thin film transistor by using an oxide semiconductorhas been developed (JP 2012-160679 A). However, is not possible tosatisfy limit conditions such as a narrow frame and low powerconsumption with the current thin film transistor using the oxidesemiconductor. Therefore, development of a process for mixing the thinfilm transistor configured of the oxide semiconductor and the thin filmtransistor configured of the low-temperature polysilicon is asked.

SUMMARY OF THE INVENTION

An object of the present invention is to decrease current variation of athin film transistor, and to increase drive performance.

According to an aspect of the present invention, there is provided adisplay device including a plurality of pixel electrodes that areprovided n a display region for displaying an image, a common electrodethat is disposed above the plurality of pixel electrodes, alight-emitting element layer that is interposed between the plurality ofpixel electrodes and the common electrode and a circuit layer that isconfigured of a plurality of layers reaching to a peripheral regionwhich is an outside of the display region from the display region, inwhich the circuit layer includes a plurality of thin film transistors ineach of the display region and the peripheral region, the plurality ofthin film transistors provided in the peripheral region are firststaggered thin film transistors where a first channel layer configuredof low-temperature polysilicon is included, and the first channel layeris not interposed between a first source electrode and a first gateelectrode, and between a first drain electrode and the first gateelectrode, the plurality of thin film transistors provided in thedisplay region are second staggered thin film transistors where a secondchannel layer configured of an oxide semiconductor is included, and thesecond channel layer is not interposed between a second source electrodeand a second gate electrode, and between a second drain electrode andthe second gate electrode, and the second thin film transistor islocated above the first thin film transistor.

According to the aspect of the present invention, since the first thinfilm transistor and the second thin film transistor are the staggeredthin film transistors, parasitic capacitance becomes small, and driveperformance is high. Since the second channel layer of the second thinfilm transistor is configured of the oxide semiconductor, it is possibleto decrease current variation. The first thin film transistor is locatedbelow the second thin film transistor. Therefore, since the second thinfilm transistor is formed after the first thin film transistor, thesecond thin film transistor is riot affected by heat at the time offorming the first channel layer configured of the low-temperaturepolysilicon.

According to another aspect of the present invention, there is provideda method for manufacturing a display device including a display regionfor displaying an image and a peripheral region which is an outside ofthe display region, the method including forming a first staggered thinfilm transistor where a first channel layer configured oflow-temperature polysilicon is included, and the first channel layer isnot interposed between a first source electrode and a first gateelectrode, and between a first drain electrode and the first gateelectrode, in the peripheral region, forming a second staggered thinfilm transistor where a second channel layer configured of an oxidesemiconductor is included, and the second channel layer is notinterposed between a second source electrode and a second gateelectrode, and between a second drain electrode and the second gateelectrode, in the display region, after forming the first thin filmtransistor, forming a plurality of pixel electrodes in the displayregion, after forming the second thin film transistor, forming alight-emitting element layer on the plurality of pixel electrodes, andforming a common electrode on the light-emitting element layer.

According to another aspect of the present invention, since the firstthin film transistor and the second thin film transistor are thestaggered thin film transistors, the parasitic capacitance becomessmall, and the drive performance is high. Since the second channel layerof the second thin film transistor is formed of the oxide semiconductor,it is possible to decrease the current variation. Furthermore, since thesecond thin film transistor formed after the first thin film transistor,the second thin film transistor is not affected by the heat at the timeof forming the first channel layer configured of the low-temperaturepolysilicon.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a display device according to a firstembodiment of the present invention.

FIG. 2 is a sectional view which is taken along II-II line of thedisplay device illustrated in FIG. 1.

FIG. 3 is a circuit diagram of the display device according co the firstembodiment of the present invention.

FIG. 4 is an outline diagram illustrating details of a circuit layer inthe first embodiment.

FIG. 5 is a diagram illustrating a modification example of the firstembodiment.

FIG. 6 is a circuit diagram of a display device according to a secondembodiment of the present invention.

FIG. 7 is an outline diagram illustrating details of a circuit layer inthe second embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the drawings.

First Embodiment

FIG. 1 is a perspective view of a display device according to a firstembodiment of the present invention. As a display device, an organicelectroluminescence di splay device is used as an example. For example,the display device combines unit pixels sub-pixels) of a plurality ofcolors which are configured of red, green and blue with each other,forms a full-color pixel (pixel), and displays a full-color image. Forexample, the display device includes a first substrate 10 havingflexibility by being configured of a resin. An integrated circuit chip12 that drives an element for displaying the image is installed in thefirst substrate 10, and a flexible printed board 14 for electricalconnection to the outside is connected to the first substrate 10.

FIG. 2 is a sectional view which is taken along II-II line of thedisplay device illustrated in FIG. 1. A circuit layer 16 is stacked onthe first substrate 10. Details of the circuit layer 16 will bedescribed later. On the circuit layer 16, a plurality of pixelelectrodes 18 (for example, anodes) configured to respond to each of theplurality of unit pixels are provided. An insulating layer 20 is formedon the circuit layer 16 and the pixel electrode 18. The insulating layer20 is positioned on a peripheral portion of the pixel electrode 18, andis formed so as to open a portion (for example, central portion) of thepixel electrode 18. By the insulating layer 20, a bank that surroundsthe portion of the pixel electrode 18 is formed.

A light-emitting element layer 22 is provided on the pixel electrode 18.The light-emitting element layer 22 is continuously positioned on theplurality of pixel electrodes 18, and is also positioned on theinsulating layer 20. As a modification example, the light-emittingelement layer 22 may be separately (dividedly) provided per pixelelectrode 18. The light-emitting element layer 22 may include at least alight-emitting layer, and may further include at least one layer of anelectron transport layer, a hole transport layer, an electron injectionlayer, and a hole injection layer.

On the light-emitting element layer 22, a common electrode 24 (forexample, cathode) is provided so as to be in contact with thelight-emitting element layer 22 above the plurality of pixel electrodes18. The common electrode 24 is formed so as to be positioned on theinsulating layer 20 serving as a bank. The light-emitting element layer22 is interposed between the pixel electrode 18 and the common electrode24, and luminance is controlled by a current flowing therebetween, andthereby, the light-emitting element layer 22 emits the light. Thelight-emitting element layer 22 is sealed by being covered with asealing layer 26 that is stacked on the common electrode 24 and isblocked from moisture. Above the sealing layer 26, a second substrate 30is provided through a filling layer 28. In the second substrate 30,colored layers 32 that are configured of the plurality of colors (forexample, blue, red and green) are provided, and a black matrix 34 isformed of a metal, a resin or the like between the colored layers 32 ofthe colors which are different from each other, and a color filter isconfigured. The second substrate 30 may be a touch panel, or may includea polarizing plate or a phase difference plate.

FIG. 3 is a circuit diagram of the display device according to the firstembodiment of the present invention. The display device includes adisplay region DR for displaying the image. In the display region DR, adisplay element DE is provided per pixel. The display element DE isconfigured of the pixel electrode 18, the common electrode 24, and thelight-emitting element layer 22 interposed therebetween which areillustrated in FIG. 2. The display element DE emits the light by thecurrent which is supplied from a power supply line PWL. At the time ofemitting the light, the luminance is adjusted depending on a videosignal which is written in a capacitor C. The video signal is suppliedfrom a signal line SGL, and is written by a first switching element SW1.A control of the first switching element SW1 is performed depending on ascanning signal which is input from a scanning line SCL. A secondswitching element SW2 controls the current flowing through the displayelement DE depending on the video signal which is written in thecapacitor C. A peripheral region PR is in vicinity of the display regionDR. In the peripheral region PR, a drive circuit that generates thescanning signal, the video signal and the like is provided.

FIG. 4 is an outline diagram illustrating details of the circuit layer16 in the first embodiment. The circuit layer 16 is at the displayregion DR and the peripheral region PR which is an outside of thedisplay region DR. In the first substrate 10, a barrier film 36 isformed so as to protect the display device from impurities which arecontained in the first substrate 10 itself.

The circuit layer 16 includes a plurality of thin film transistors inthe peripheral region PR. The plurality of thin film transistorsprovided in the peripheral region PR are first thin film transistorsTFT1 including a first channel layer CH1 which is configured oflow-temperature polysilicon. The first thin film transistor TFT1 isincluded in the drive circuit that is formed in the peripheral region PRillustrated in FIG. 3. The first thin film transistor TFT1 is astaggered thin film transistor. Therefore, since the first channel layerCH1 is not interposed between a first source electrode SE1 and a firstgate electrode GE1, and between a first drain electrode DE1 and thefirst gate electrode GE1, parasitic capacitance becomes small, and driveperformance is high. The first channel layer CH1 includes a portionprotruding from a portion which overlaps the first gate electrode GE1,and a resistance value of the portion is lowered by injection of ions.Furthermore, a first contact plug CP1 is provided. The first contactplug CP1 penetrates upper insulating layers (plurality of layers) incomparison with the first thin film transistor TFT1 of the circuit layer16, and is connected to the portion of the first channel layer CH1(protruding from the portion which overlaps the first gate electrodeGE1).

In the display region DR, the plurality of pixel electrodes 18 areprovided. As described above with reference to FIG. 2, the insulatinglayer 20 is positioned on the pixel electrode 18. Other members providedon the pixel electrode 18 are omitted in FIG. 4. The circuit layer 16includes a plurality of thin film transistors in the display region DR.The plurality of thin film transistors provided in the display region DRare second thin film transistors TFT2 including a second channel layerCH2 which is configured of an oxide semiconductor. Since the secondchannel layer CH2 of the second thin film transistor TFT2 is configuredof the oxide semiconductor, it is possible to decrease currentvariation. Moreover, the second thin film transistor TFT2 is a staggeredthin film transistor. Therefore, since the second channel layer CH2 isnot interposed between a second source electrode SE2 and a second gateelectrode GE2, and between a second drain electrode DE2 and the secondgate electrode GE2, the parasitic capacitance becomes small, and thedrive performance is high. The second channel layer CH2 includes aportion protruding from a portion which overlaps the second gateelectrode GE2, and the resistance value of the portion is lowered by theinjection of the ions.

The second thin film transistor TFT2 is located above the first thinfilm transistor TFT1. Therefore, since the second thin film transistorTFT2 is formed after the first thin film transistor TFT1, the secondthin film transistor TFT2 is not affected by heat at the time of formingthe first channel layer CH1 configured of the low-temperaturepolysilicon.

The first switching element SW1 and the second switching element SW2illustrated in FIG. 3 are respectively the second thin film transistorsTFT2 illustrated in FIG. 4. The second thin film transistor TFT2 servingas the second switching element SW2 is connected so as to control asupply amount of the current to each of the plurality of pixelelectrodes 18. Moreover, a second contact plug CP2 is provided. Thesecond contact plug CP2 penetrates the upper insulating layer incomparison with the second thin film transistor TFT2 of the circuitlayer 16, and is connected to the portion of the second channel layerCH2 (protruding from the portion which overlaps the second gateelectrode GE2).

The plurality of layers configuring the circuit layer 16 include a firstconductive layer CL1 that is formed by injecting the ions into thelow-temperature polysilicon layer in the display region DR. The firstconductive layer CL1 is positioned at the same layer as the firstchannel layer CH1 of the first thin film transistor TFT1, and is locatedbelow the second thin film transistor TFT2. The first conductive layerCL1 has a size overlapping a whole of the second thin film transistorTFT2, and thereby, it is possible to protect the second thin filmtransistor TFT2 from heat or static electricity. In the example of FIG.4, the second contact plug CP2 is provided so as to expose an endportion of the second channel layer CH2, and furthermore, to reach tothe first conductive layer CL1.

The plurality of layers configuring the circuit layer 16 furtherinclude, in the display region DR, the first conductive layer CL1 isused as one electrode of the capacitor C and a second conductive layerCL2 that is used as the other electrode at an opposite position to thefirst conductive layer CL1. The second conductive layer CL2 ispositioned at the same layer as the first gate electrode GE1 of thefirst thin film transistor TFT1, and is located below the second thinfilm transistor TFT2. Since the capacitor C is provided so as to overlapthe second thin film transistor TFT2, a flat space is not needed.

In a method for manufacturing the display device according to the firstembodiment, the first thin film transistor TFT1 described above isformed in the peripheral region PR. In the process, at the same time, inthe display region DR, the first conductive layer CL is formed byforming the low-temperature polysilicon layer and injecting the ionsinto the low-temperature polysilicon layer. The first conductive layerCL1 may be formed so as to have the size overlapping the whole of thesecond thin film transistor TFT2. In the process, the second conductivelayer CL2 that is used as an electrode for forming the capacitor C alongwith the first conductive layer CL1 is formed, at the same time as theforming of the first gate electrode GE1.

After the first thin film transistor TFT1 is formed, the second thinfilm transistor TFT2 described above is formed in the display region DR.Since the second thin film transistor TFT2 is formed after the firstthin film transistor TFT1, the second thin film transistor TFT2 is notaffected by the heat at the time of forming the first channel layer CH1configured of the low-temperature polysilicon. After the second thinfilm transistor TFT2 is formed, the plurality of pixel electrodes 18 areformed in the display region DR. As illustrated in FIG. 2, thelight-emitting element layer 22 is formed on the plurality of pixelelectrodes 18, and the common electrode 24 is formed on thelight-emitting element layer 22.

MODIFICATION EXAMPLE

FIG. 5 is a diagram illustrating a modification example of the firstembodiment. In the modification example, the plurality of thin filmtransistors provided in the display region DR include the first thinfilm transistor TFT1 at a position of the same layer as the first thinfilm transistor TFT1 of the peripheral region PR. That is, the firstswitching element SW1 illustrated in FIG. 3 is the first thin filmtransistor TFT1. The first contact plug CP1 that penetrates the upperinsulating layer in comparison with the first thin film transistor TFT1of a circuit layer 116, and is connected to the first channel layer CH1,is provided.

The plurality of layers configuring the circuit layer 116 include ametal layer 140 that is formed of the same material at a position of thesame layer as the second gate electrode GE2 of the second thin filmtransistor TFT2 so as to overlap at least an end portion of the firstchannel layer CH1 of the first thin film transistor TFT1. The metallayer 140 is formed so as to be integrated with the first contact plugCP1.

As described above, the second channel layer CH2 includes the portionprotruding from a portion which overlaps the second gate electrode GE2.Since the second gate electrode GE2 is used as a mask and the ions areinjected, the resistance value is lowered in the portion. By providingthe metal layer 140, it is possible to prevent characteristicdeterioration of the first thin film transistor TFT1 due to the processfor injecting the ions.

In a method for manufacturing the display device according to themodification example, a point in which the first thin film transistorTFT1 is also formed in the display region DR in the process for formingthe first thin film transistor TFT1 in the peripheral region PR, isdifferent from that of the above embodiment.

In the display region DR, the second thin film transistor TFT2 isformed. Before the second gate electrode GE2 is formed, a through-hole142 reaching to an upper surface of the first channel layer CH1 from theinsulating layer below the second gate electrode GE2 is formed. At thesame time as the forming of the second gate electrode GE2, the firstcontact plug CP1 is formed within the through-hole 142, and the metallayer 140 is formed. The metal layer 140 is formed so as to overlap atleast the end portion of the first channel layer CH1 of the first thinfilm transistor TFT1 by being integrated with the first contact plugCP1.

Second Embodiment

FIG. 6 is a circuit diagram of a display device according to a secondembodiment of the present invention. In the embodiment, the video signalis written in the capacitor C by the first switching element SW1, thecurrent flowing through the display element DE is controlled by thesecond switching element SW2, and a current supply is switched betweenan ON state and an OFF state by a third switching element SW3.

FIG. 7 is an outline diagram illustrating details of a circuit layer 216in the second embodiment. In the embodiment, the capacitor C illustratedin FIG. 6 is configured of a plurality of capacitors first capacitor C1,second capacitor C2 and third capacitor C3) which are connected to eachother in series.

The first capacitor C1 includes a pair of electrodes E1 that is formedby injecting the ions into the low-temperature polysilicon layer. Thepair of electrodes E1 is configured of the same material at the samelayer as the first channel layer CH1 and the first gate electrode GE1 ofthe first thin film transistor TFT1 (see FIG. 4) which are formed in theperipheral region PR.

A pair of electrodes E2 of the second capacitor C2 is configured of anelectrode that as formed of a portion (portion protruding from theportion which overlaps the second gate electrode GE2, and where theresistance value is lowered) of the second channel layer CH2 of thesecond thin film transistor TFT2 serving as the second switching elementSW2, and an electrode (of the same material at the same layer as thesecond gate electrode GE2) which is formed above the electrode.

A pair of electrodes E3 of the third capacitor C3 is configured of oneelectrode E2 of the second capacitor C2, and an electrode which isformed above the electrode E2. The second capacitor C2 and the thirdcapacitor C3 are connected to each other in series by sharing oneelectrode. An electrode E1 of the first capacitor C1 is connected to theother electrode which is not shared with the second capacitor C2 or thethird capacitor C3, by a contact plug CP. Other details thereof areequivalent to the content described in the first embodiment. In a methodfor manufacturing the display device according to the second embodiment,the pair of electrodes E3 of the third capacitor C3 is formed at thesame time as the time of forming the first thin film transistor TFT1(see FIG. 4) in the peripheral region PR. When the second thin filmtransistor TFT2 is formed, the pair of electrodes E2 (one electrode E3of the third capacitor C3) of the second capacitor C2 is formed.Thereafter, the other electrode E3 of the third capacitor C3 is formed.

The display device is not limited to the organic electroluminescencedisplay device, and may be a display device in which a light-emittingelement such as a quantum dot light-emitting element (QLED: Quantum-DotLight Emitting Diode) is included in each pixel, or may be a liquidcrystal display device.

While there have been described what are at present considered to becertain embodiments of the invention, it will be understood that variousmodifications may be made thereto, and it is intended that the appendedclaims cover all such modifications as fall within the true spirit andscope of the invention.

1-7. (canceled)
 8. A method for manufacturing a display device includinga display region for displaying an image and a peripheral region whichis an outside of the display region, the method comprising: forming afirst staggered thin film transistor where a first channel layerconfigured of low-temperature polysilicon is included, and the firstchannel layer is not interposed between a first source electrode and afirst gate electrode, and between a first drain electrode and the firstgate electrode, in the peripheral region; forming a second staggeredthin film transistor where a second channel layer configured of an oxidesemiconductor is included, and the second channel layer is notinterposed between a second source electrode and a second gateelectrode, and between a second drain electrode and the second gateelectrode, in the display region, after forming the first thin filmtransistor; forming a plurality of pixel electrodes in the displayregion, after forming the second thin film transistor; forming alight-emitting element layer on the plurality of pixel electrodes; andforming a common electrode on the light-emitting element layer.
 9. Themethod for manufacturing a display device according to claim 8, whereinin the forming of the first thin film transistor in the peripheralregion, a conductive layer is formed by forming the low-temperature polysilicon layer and injecting ions into the low-temperature polysiliconlayer, in the display region.
 10. The method for manufacturing a displaydevice according to claim 9, wherein the conductive layer is termed tohave a size overlapping a whole of the second thin film transistor. 11.The method for manufacturing a display device according to claim 9,wherein in the forming of the first thin film transistor in theperipheral region, a second conductive layer that is used as anelectrode for forming a capacitor along with the conductive layer isformed, at the same time as the forming of the first gate electrode. 12.The method for manufacturing a display device according to claim 8,wherein in the forming of the first thin film transistor in theperipheral region, the first thin film transistor is also formed in thedisplay region.
 13. The method for manufacturing a display deviceaccording to claim 8, wherein in the forming of the second thin filmtransistor in the display region, a through-hole reaching to an uppersurface of the first channel layer from an insulating layer below thesecond gate electrode is formed, before forming the second gateelectrode, a contact plug is formed within the through-hole, at the sametime as the forming of the second gate electrode, and a metal layer isformed to overlap at least an end portion of the first channel layer ofthe first thin film transistor by being integrated with the contactplug.